Journal of Semiconductors(2010年05期)
半導(dǎo)體學(xué)報(bào)(英文版)

目 錄

• Properties of the two- and three-dimensional quantum dot qubit
• Pressure influence on bound polarons in a strained wurtzite GaN/Al_xGa_(1_x)N heterojunction under an electric field
• Time-delayed feedback control of chaos in a GaAs/AlGaAs heterostructure
• A simple expression for impurity distribution after multiple diffusion processes
• Optical and structural properties of sol-gel derived nanostructured CeO_2 film
• Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite
• AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer
• Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering
• Humidity sensitive organic field effect transistor
• Ag/PEPC/NiPc/ZnO/Ag thin film capacitive and resistive humidity sensors
• Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
• Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions
• Guided modes in a rectangular waveguide with semiconductor metamaterial
• Characteristics of a novel biaxial capacitive MEMS accelerometer
• A 2.1-6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver
• Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis
• A 1.1 mW 87 dB dynamic range △∑ modulator for audio applications
• A 5-GHz programmable frequency divider in 0.18-μm CMOS technology
• A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications
• Design and noise analysis of a sigma-delta capacitive micromachined accelerometer
• A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology
• A low-jitter RF PLL frequency synthesizer with high-speed mixed-signal down-scaling circuits
• A high-performance,low-power ∑△ ADC for digital audio applications
• A reconfigurable analog baseband circuit for WLAN,WCDMA,and Bluetooth
• Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies
• A novel embedded soft-start circuit for SOC power supply
• SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs
• Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories